PVD Sputtering Deposition
Sputtering Deposition
Principle: In a vacuum chamber, an inert gas (such as Ar) is ionized by a high-voltage electric field to generate plasma. The positively charged Ar⁺ ions, under the acceleration of the electric field, bombard the surface of the target material. Through momentum transfer, the target material atoms are 'sputtered' out (in a gaseous state) and then deposited on the substrate surface to form a film. Core advantages: Strong adhesion between the film and the substrate, high uniformity of composition (close to the composition of the target material), and a wide range of depositable materials (metals, alloys, ceramics, compounds, etc.). Mainstream technologies Magnetron Sputtering (magnetron Sputtering) is the most widely used sputtering technology in semiconductors. By confining the movement trajectory of electrons through a magnetic field, it prolongs the collision time between electrons and gas, increases the plasma density, thereby enhancing the sputtering efficiency and thin film deposition rate, while reducing the substrate temperature rise. Suitable for heat-sensitive semiconductor substrates (such as silicon wafers).
