DHVE 531da7cb4ec0a43f6814399a False 1986 40
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Dinesh high vacuum engineering HV or UHV RF/ DC/ Pulsed DC Compatible Magnetron Sputtering System Single as well as multi target sputter source option Sputter configuration available from 1-6 Sputter sources in sputter up or sputter down Suitable for co-deposition as well as sequential deposition Customize combination available base on process requirement Compact foot print for better utilization of available space Manual, semi-automatic or fully automatic mode System Features Process Chamber Material: SS304, SS304L, SS316 Geometry: Cylindrical, Box type, D-shaped, Spherical High vacuum pumping system: Cryo pump, Turbo Molecular pump, Diffussion pump Base pressure: 10-7 torr by using suitable capacity turbo molecular pump Electro-polished process chamber from inner and outer side for better vacuum performance Extra ports for future up-gradation as per user requirement Sputtering sources RF/DC/Pulsed DC compatible sputtering sources Manual or motorised shutter assembly Available sizes 1”, 2”, 3”, 4”, 6” High strength magnets for better performance In –situ tilt arrangement available Substrate Holder & Heaters Substrate holder to hold various sizes of substrate upto 8” dia. Variable substrate rotation upto 50 rpm In situ substrate to target distance adjustment upto 100 mm in order to achieve desired uniformity and deposition rate Optional RF/DC substrate biasing facility Uniform substrate heating upto 800 Deg C are available Gas Management Mass flow control base gas management system with digital display and controller Power Supply RF Power supply with auto matching network DC/ Pulsed DC Assymetric Bi-polar Pulsed DC Power supply Optional Features Load lock with magnetic transfer arm Thickness monitor with sensors Substrate Ion cleaning Applications R& D sputtering application Optical coating MEMS and Nano technology Photovoltaic coating Metals, metal oxides and dielectric coatings Decorative coatings Tool coatings
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